aot1608l/AOB1608L 60v n-channel rugged planar mosfet general description product summary v ds i d (at v gs =10v) 140a r ds(on) (at v gs =10v) < 7.6m 100% uis tested 100% r g tested symbol v v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted drain-source voltage 60 60v the aot1608l/AOB1608L uses a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding applications, including motor control. with low r ds(on) and excellent thermal capability this device is appropriate for h igh current switching and can endure adverse operating conditions. g ds to220 top view bottom view g g s d d s d d to-263 d 2 pak top view bottom view d d s g g s v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r jc t c =25c 2.1 166 t c =100c maximum junction-to-ambient a c/w r ja 12 48 15 units junction and storage temperature range -55 to 175 c thermal characteristics parameter typ max v 20 gate-source voltage avalanche energy l=0.1mh c mj avalanche current c 9 continuous drain current 638 11 v pulsed drain current c continuous drain current g t c =25c t c =100c drain-source voltage 60 333 a 113 aa t a =70c i d 140 100 256 t a =25c i dsm power dissipation a p dsm w t a =70c 1.3 t a =25c p d w maximum junction-to-case c/w c/w maximum junction-to-ambient a d 0.35 60 0.45 power dissipation b g ds to220 top view bottom view g g s d d s d d to-263 d 2 pak top view bottom view d d s g g s rev0: may 2011 www.aosmd.com page 1 of 6 downloaded from: http:///
aot1608l/AOB1608L symbol min typ max units bv dss 60 v v ds =60v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 2.5 3.1 3.7 v i d(on) 256 a 6.6 7.6 t j =125c 11.4 13.2 6.3 7.3 m g fs 51 s v sd 0.7 1 v i s 140 a c iss 2450 3069 3690 pf c oss 500 721 945 pf c rss 30 56 80 pf r g 1.5 2.9 4.4 q g (10v) 54 69 84 nc q gs 15 nc q gd 21 nc t d(on) 18 ns t 25 ns maximum body-diode continuous current g input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time v =10v, v =30v, r =1.5 , gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =30v, i d =20a gate source charge gate drain charge i dss forward transconductance diode forward voltage m to220 i s =1a,v gs =0v v ds =5v, i d =20a v gs =10v, i d =20a to263 r ds(on) static drain-source on-resistance v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current reverse transfer capacitance on state drain current i d =250 a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a drain-source breakdown voltage v gs =0v, v ds =25v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions a v ds =v gs , i d =250 ? t r 25 ns t d(off) 47 ns t f 11 ns t rr 28 40 52 ns q rr 245 355 465 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =20a, di/dt=500a/ s turn-on rise time turn-off delaytime v gs =10v, v ds =30v, r l =1.5 , r gen =3 turn-off fall time i f =20a, di/dt=500a/ s body diode reverse recovery time a. the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design, and the maximu m temperature of 175 c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =175 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =175 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. maximum uis current limited by test equipment. d. the r ja is the sum of the thermal impedance from junction t o case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175 c. the soa curve provides a single pulse rating. g. the maximum current limited by package is 120a. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. rev0: may 2011 www.aosmd.com page 2 of 6 downloaded from: http:///
aot1608l/AOB1608L typical electrical and thermal characteristics 17 52 10 0 18 0 20 40 60 80 100 0 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 2 4 6 8 10 0 5 10 15 20 25 30 r ds(on) (m ? ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =10v i d =20a 25 c 125 c v ds =5v v gs =10v 0 20 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =4.5v 5.5v 10v 5v 40 0 20 40 60 80 100 0 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 2 4 6 8 10 0 5 10 15 20 25 30 r ds(on) (m ? ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 1e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =10v i d =20a 3 6 9 12 15 18 2 4 6 8 10 r ds(on) (m ? ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) 25 c 125 c v ds =5v v gs =10v i d =20a 25 c 125 c 0 20 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =4.5v 5.5v 10v 5v rev0: may 2011 www.aosmd.com page 3 of 6 downloaded from: http:///
aot1608l/AOB1608L typical electrical and thermal characteristics 17 52 10 0 18 0 2 4 6 8 10 0 15 30 45 60 75 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 1000 2000 3000 4000 5000 6000 7000 0 10 20 30 40 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =30v i d =20a t j(max) =175 c t c =25 c 10 s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 s 10ms 1ms dc r ds(on) limited t j(max) =175 c t c =25 c 100 s 0 1500 3000 4500 6000 7500 9000 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- case (note f) 40 0 2 4 6 8 10 0 15 30 45 60 75 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 1000 2000 3000 4000 5000 6000 7000 0 10 20 30 40 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 z ? jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) c oss c rss v ds =30v i d =20a single pulse d=t on /t t j,pk =t c +p dm .z jc .r jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =175 c t c =25 c 10 s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 s 10ms 1ms dc r ds(on) limited t j(max) =175 c t c =25 c 100 s r jc =0.45 c/w 0 1500 3000 4500 6000 7500 9000 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- case (note f) rev0: may 2011 www.aosmd.com page 4 of 6 downloaded from: http:///
aot1608l/AOB1608L typical electrical and thermal characteristics 17 52 10 0 18 0 100 200 300 400 500 0 25 50 75 100 125 150 175 power dissipation (w) t case ( c) figure 13: power de-rating (note f) 0 40 80 120 160 200 0 25 50 75 100 125 150 175 current rating i d (a) t case ( c) figure 14: current de-rating (note f) 1 10 100 1000 10000 0.0001 0.01 1 100 10000 power (w) pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) t a =25 c 0 40 80 120 160 200 1 10 100 1000 10000 i ar (a) peak avalanche current time in avalanche, t a (ms) figure 12: single pulse avalanche capability (note c) t a =25 c t a =150 c t a =100 c t a =125 c 40 0.001 0.01 0.1 1 10 0.01 0.1 1 10 100 1000 z ? ja normalized transient thermal resistance pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 100 200 300 400 500 0 25 50 75 100 125 150 175 power dissipation (w) t case ( c) figure 13: power de-rating (note f) 0 40 80 120 160 200 0 25 50 75 100 125 150 175 current rating i d (a) t case ( c) figure 14: current de-rating (note f) 1 10 100 1000 10000 0.0001 0.01 1 100 10000 power (w) pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) t a =25 c r ja =60 c/w 0 40 80 120 160 200 1 10 100 1000 10000 i ar (a) peak avalanche current time in avalanche, t a (ms) figure 12: single pulse avalanche capability (note c) t a =25 c t a =150 c t a =100 c t a =125 c rev0: may 2011 www.aosmd.com page 5 of 6 downloaded from: http:///
aot1608l/AOB1608L - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vgs vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev0: may 2011 www.aosmd.com page 6 of 6 downloaded from: http:///
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